2SC2983

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and driver stage amplifier applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC IB PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 160 V 160 V 5 V 1.5 A 0.3 A 15 W 150 ℃ -55~150 ℃ 2SC2983 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(on) Base-Emitter On Voltage VCE= 5V; IC= 500mA V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 ICBO Collector Cutoff Current VCB= 160V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 0.1A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V  hFE1 Classifications O Y 70-140 120-240 2SC2...