isc Silicon PNP Power Transistor
DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat)
VCE(sat)≤-0.4V@(IC=-1A,IB...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat)
VCE(sat)≤-0.4V@(IC=-1A,IB=-50mA) ·Complementary
NPN types:2SCR574D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Low frequency amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-4
A
10
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SAR574D
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
2SAR574D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BVCBO Collector-Base breakdown voltage
IC=-100uA
-80
V
BVCEO Collector-Emitter breakdown voltage IC=-1mA
-80
V
BVEBO Emitter-Base breakdown voltage
IE=-100uA
-6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -50mA
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
-0.4 V -1.0 μA -1.0 μA
hFE
DC Current Gain
IC= -0.1A; VCE= -3V
120
390
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
30
pF
fTNOTE
Current-Gain—Bandwidth Product
NOTE:Pulsed
IC= -0.5A; VCE= -10V,f= 100MHz
280
MHz
...
