isc Silicon PNP Power Transistor
DESCRIPTION ·Large current capacitance ·High-speed switching ·100% avalanche tested ·M...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Large current capacitance ·High-speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·relay drivers,lamp drivers,motor drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃ Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
-13
A
25 W
2
150
℃
-55~150
℃
2SA2222SG
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isc Silicon
PNP Power
Transistor
2SA2222SG
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -300mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -6A; IB= -300mA
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -100uA; IC= 0
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -0.27A; VCE= -2V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= -1A; VCE= -10V
MIN TYP. MAX UNIT
-0.5
V
-1.2
V
-50
V
-6
V
-10
μA
-10
μA
150
450
115
pF
230
...