2SA1646-Z

isc Silicon PNP Power Transistor DESCRIPTION ·Fast Switching Speed ·Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@IC= -6A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This type of power transistor is developed for high-speed switching and features a very low VCE(sat), is ideal for use in switching power supplies,DC/DC converters,motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high current switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse -20 A IB Base Current-Continuous -6 A Total Power Dissipation @TC=25℃ 40 PT W Total Power Dissipation @Ta=25℃ 1.5 TJ Junction Temperature Tstg Storage Temperature 150 ℃ -55~150 ℃ 2SA1646-Z isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1646-Z ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1NOTE Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A VCE(sat)-2NOTE Collector-Emitter Saturation Voltage IC= -8A; IB= -0.4A VBE(sat)-1NOTE Base-Emitter Saturation Voltage IC= -6A; IB= -0.3A VBE(sat)-2NOTE Base-Emitter Saturation Voltage IC= -8A; IB= -0.4A ICBO Collector Cut...