2SA1593

isc Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage and large current capacity ·Fast switching speed ·Small and slim package permitting ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC4135 APPLICATIONS ·Power supplies, relay drivers,lamp drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature -3 A 15 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1593 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1.0A; IB= -0.1A VBE(sat) Base-Emitter Saturation Voltage IC= -1.0A; IB= -0.1A V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10uA; IC= 0 ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -0.1A; VCE= -5V COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC= -0.1mA; VCE= -10V  hFE Classif...