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2N6582

Silicon NPN Power Transistor

Description

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·High Current Capability ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5 V(Max)@ IC = 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for linear ampl...

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