2N6235

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 325V(Min) ·DC Current Gain- : hFE = 25-125@ IC= 1A ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC = 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed f for high-voltage medium power and switching reguators applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 325 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current 2 A PC Collector Power Dissipation@TC=25℃ 50 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 3.5 ℃/W 2N6235 isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 20mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1.0A VBE(sat)-1 Base-Emitter Saturation Voltage IC=1A; IB= 0.1A VBE(sat)-2 Base-Emitter Saturation Voltage IC=5A; IB= 1.0A VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 5V ICEO Collec...