2SJ321
Silicon P-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings
Outline
TO-220CFM
D 12 3 1. Gate
G 2. Drain 3. Source
S
November 1996
2SJ321
Absolute ...
