Document
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRB20200CT
FEATURES ·Schottky barrier chip ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For use in high frequency rectifier of switching mode
power supplies,freewheeling diodes,DC-to-DC converters or polarity protection application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRMS
VR
IF(AV)
Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
Average Rectified Forward Current
200 V 20 A
Nonrepetitive Peak Surge Current
IFSM 8.3ms single half sine-wave superimposed on 150 rated load conditions
A
TJ Junction Temperature
-65~150 ℃
Tstg Storage Temperature Range
-65~175 ℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRB20.