MBR60200PT

Schottky Barrier Rectifier MBR60200PT FEATURES ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier, majonty carrier conduction ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in low voltage ,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltag VALUE UNIT 200 V 140 V IF(AV) IFSM IRRM TJ Average Rectified Forward Current 60 A Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed 400 A on rated load conditions Peak Repetitive Reverse Surge Current (20μs, 1.0kHz) 1.0 A Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -65~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 1,000 V/μs isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier MBR60200PT THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.5 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS VF Maximum Instantaneous Forward Voltage IF= 30A ; Tc= 25℃ VR= VRWM;Tc= 25℃ IR Maximum Instantaneous Reverse Current VR= VRWM;Tc= 1...