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2SD180
Silicon NPN Power Transistor
Description
isc Silicon
NPN
Power
Transistor
s DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier and low speed switching ·Suitable ...
Inchange Semiconductor
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