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2SCR586D

Part Number	2SCR586D
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 18, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)≤0.3V@(IC=2A,IB=1...
Datasheet	2SCR586D PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)≤0.
3V@(IC=2A,IB=100mA) ·Complementary NPN types:2SAR586D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SCR586D is...

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