2SCR572D

isc Silicon NPN Power Transistor DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)=0.4V@(IC=2A,IB=0.1A) ·Complementary NPN types:2SAR572D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SCR572D isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SCR572D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base breakdown voltage IC=100uA BVCEO Collector-Emitter breakdown voltage IC=1mA BVEBO Emitter-Base breakdown voltage IE=100uA VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 100mA ICBO Collector Cutoff Current VCB= 30V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 0.5A; VCE= 3V COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz fTNOTE Current-Gain—Bandwidth Product NOTE:Pulsed IC= 0.5A; VCE= 10V,f= 100MHz MIN TYP. MAX UNIT 30 V 30 V 6 V 0.4 V 1.0 μA 1.0 μA 200 500 30 pF 300 MHz NOTICE： ISC reserves...