Midium Power Transistors (30V / 5A)
2SCR542D
Structure NPN Silicon epitaxial planar transistor
Features 1) Low satu...
Midium Power
Transistors (30V / 5A)
2SCR542D
Structure
NPN Silicon epitaxial planar
transistor
Features 1) Low saturation voltage
VCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA) 2) High speed switching
Applications Driver
Dimensions (Unit : mm)
CPT3
(SC-63)
(1) Base (2) Collector (3) Emitter
Packaging specifications
Type
Package Code Basic ordering unit (pieces)
CPT3 TL
2500
Inner circuit (Unit : mm)
(2)
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC
Pulsed
Power dissipation
Junction temperature Range of storage temperature
VCBO VCEO VEBO
IC ICP *1 PD *2 PD *3 Tj Tstg
30 30 6 5 10 1 10 150 -55 to 150
*1 Pw=10ms, Single Pulse
*2 Mounted on a substrate
*3 TC=25°C
Unit V V V A A W W
°C °C
(1) Base (2) Collector (3) Emitter
(1)
(3)
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1/5
2010.12 - Rev.A
2SCR542D
Electri...
