isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-(Vcb=1200V) · High Reliability ·Adoption of MBIT process ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Inverter-controlled ·Lighting
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
...
