2SC4332-Z

isc Silicon NPN Power Transistor 2SC4332-Z DESCRIPTION ·Low collector saturation voltage ·Fast switching speed ·High DC current gain and excellent linearity ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This transistor is ideal for use in Switching regulators, DC/DC converters,motor drivers,Solenoid drivers and other low-voltage power supply devices,as well as for high-current switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak NOTE1 Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ NOTE2 TJ Junction Temperature 10 A 15 W 1.0 150 ℃ Tstg Storage Temperature Range NOTE1:PW≤300ms,Duty cycle ≤10% NOTE2:Printing boarding mounted -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1NOTE Collector-Emitter Saturation Voltage IC= 3A; IB= 150mA VCE(sat)-2NOTE Collector-Emitter Saturation Voltage IC= 4A; IB= 200mA VBE(sat)-1NOTE Base-Emitter Saturation Voltage IC= 3A; IB= 150mA VBE(sat)-2NOTE Base-Emitter Saturation Voltage IC= 4A; IB= 200mA ICBO Collector Cutoff Current VCB= 60V; IE= 0 IEBO Emi...