isc Silicon NPN Power Transistor
2SC4332
DESCRIPTION ·Low collector saturation voltage ·Fast switching speed ·High DC ...
isc Silicon
NPN Power
Transistor
2SC4332
DESCRIPTION ·Low collector saturation voltage ·Fast switching speed ·High DC current gain and excellent linearity ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·This
transistor is ideal for use in Switching
regulators,
DC/DC converters,motor drivers,Solenoid drivers and other low-voltage power supply devices,as well as for high-current switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak NOTE1
Collector Power Dissipation
PC
@ TC=25℃ Collector Power Dissipation
@Ta=25℃ NOTE2
TJ
Junction Temperature
10
A
15 W
1.0
150
℃
Tstg
Storage Temperature Range
NOTE1:PW≤300ms,Duty cycle ≤10% NOTE2:Printing boarding mounted
-55~150
℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1NOTE Collector-Emitter Saturation Voltage IC= 3A; IB= 150mA
VCE(sat)-2NOTE Collector-Emitter Saturation Voltage IC= 4A; IB= 200mA
VBE(sat)-1NOTE Base-Emitter Saturation Voltage
IC= 3A; IB= 150mA
VBE(sat)-2NOTE Base-Emitter Saturation Voltage
IC= 4A; IB= 200mA
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
IEBO
Emitt...