isc Silicon NPN Power Transistor
2SC4331
DESCRIPTION ·Available for high-current control in small dimension ·Low colle...
isc Silicon
NPN Power
Transistor
2SC4331
DESCRIPTION ·Available for high-current control in small dimension ·Low collector saturation voltage ·Fast switching speed ·High DC current gain and excellent linearity ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·This
transistor is ideal for use in Switching
regulators,
DC/DC converters,motor drivers,Solenoid drivers and other low-voltage power supply devices,as well as for high-current switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak NOTE1
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@Ta=25℃ NOTE2
TJ
Junction Temperature
10
A
15 W
1.0
150
℃
Tstg
Storage Temperature Range
NOTE1:PW≤300ms,Duty cycle ≤10% NOTE2:Printing boarding mounted
-55~150
℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1NOTE Collector-Emitter Saturation Voltage IC= 3A; IB= 150mA
VCE(sat)-2NOTE Collector-Emitter Saturation Voltage IC= 4A; IB= 200mA
VBE(sat)-1NOTE Base-Emitter Saturation Voltage
IC= 3A; IB= 150mA
VBE(sat)-2NOTE Base-Emitter Saturation Voltage
IC= 4A; IB= 200mA
ICB...