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2SC3893A Dataheets PDF



Part Number 2SC3893A
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet 2SC3893A Datasheet2SC3893A Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- :VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Col.

  2SC3893A   2SC3893A


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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- :VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current- Peak 15 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3893A isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3893A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V VECF C-E Diode Forward Voltage IF= 6A fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V COB Output Capacitance IE= 0; VCB= 10V; ftest=1.0MHz Switching Times , Resistive load tstg Storage Time tf Fall Time ICP= 6A, IB1= 1.2A; IB2= -2.4A; RL= 33.3Ω MIN TYP. MAX UNIT 5 V 1500 V 5.0 V 1.5 V 10 μA 66 200 mA 8 2.0 V 3 MHz 210 pF 2.5 μs 0.2 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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