2SC3852A

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Driver for solenoid and motor, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 25 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SC3852A isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3852A ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 50mA ICBO Collector Cutoff Current VCB= 100V; IE= 0 0.5 V 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 μA hFE DC Current Gain IC= 0.5A; VCE= 4V 400 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 50 pF fT Current-Gain—Bandwidth Product IE= -0.2A; VCE= 12V 15 MHz Switching Times ton Turn-On Time 0.8 μs tstg Storage Time IC= 1A; IB1= 15mA; IB2= -30mA; VCC= 20V; RL= 20Ω 3.0 μs tf Fall Time ...