2SB1275

isc Silicon PNP Power Transistor DESCRIPTION ·Suitable for middle power drivers ·High voltage:VCEO=-160V ·Complementary NPN types:2SD1918 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3.0 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1275 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1275 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BVCBO Collector-Base breakdown voltage IC=-50uA -160 V BVCEO Collector-Emitter breakdown voltage IC=-1mA -160 V BVEBO Emitter-Base breakdown voltage IE=-50uA -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -100mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= -1A; IB= -100mA VCB= -120V; IE= 0 VEB= -4V; IC= 0 -1.5 V -1.0 μA -1.0 μA hFE DC Current Gain IC= -0.1A; VCE= -5V 56 180 COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz 30 pF fT Current-Gain—Bandwidth Pr...