isc Silicon PNP Power Transistor
DESCRIPTION ·High current and high fT ·Low collector-to-emitter saturation voltage ·Ex...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·High current and high fT ·Low collector-to-emitter saturation voltage ·Excellent linearity of hFE ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Relay drivers,High speed inverters,converters and other
general high-current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-5
A
ICP
Collector Current-Pulse
Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
-8
A
20
W
1.0
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SB1203
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isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -150mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; IB= -150mA
V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -10uA; IC= 0
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE1
DC Current Gain
IC= -0.5A; VCE= -2V
hFE2
DC Current Gain
I...