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2SB1184

Part Number	2SB1184
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Nov 18, 2016
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1184 DESCRIPTION ·Low VCE(sat) ·Small and slim package ·Com...
Datasheet	2SB1184 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1184 DESCRIPTION ·Low VCE(sat) ·Small and slim package ·Complements the 2SD1760/2SD1864 ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 1.
0 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark ...

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