isc Silicon PNP Darlington Power Transistor
BD684
DESCRIPTION ·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = -120V ·DC Current Gain—
: hFE = 750(Min) @ IC= -1.5 A ·Complement to Type BD683 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and video output applications.
ABSOLUTE MAXIMUM...
