isc Silicon PNP Power Transistors
DESCRIPTION ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)=-1.0V(Max)@ IC=-10A ·DC Current Gain-
: hFE= 20(Min)@IC=-10A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose power amplifier and switching
applicati...