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BD263

Silicon NPN Power Transistor

Description

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE ...

Inchange Semiconductor

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