BD189

isc Silicon NPN Power Transistor BD189 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.5A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 60V(Min) ·Complement to type BD190 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 5~10 Watt audio amplifiers utilizing Complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 3.12 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 2V ICBO Collector Cutoff Current VCB= 70V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A; VCE= 2V hFE-2 DC Current Gain IC= 2A; VCE= 2V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V; f= 1MHz BD189 MI...