isc Silicon NPN Power Transistors
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC=2A ·Collector...
isc Silicon
NPN Power
Transistors
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC=2A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V (Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
70
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
8
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD476N
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 10μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
hFE -1
DC current gain
IC= 1A ; VCE= 4V
hFE -2
DC current gain
IC=0.1A ; VCE= 4V
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 4V
Switching times
ton
Turn-on Time
toff
Turn-off Time
tstg
Fall Time
IC= 0.5A ;IB1= IB2= 50mA; VCC=...