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2SD2161

Silicon NPN Power Transistor

Description

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 2A, IB= 2mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed f...

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