2SD2118

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2118 DESCRIPTION ·High current capacity ·Small and slim package making it easy to make 2SD2118-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Strobes,voltage regulators,relay drivers,lamp drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A PC Collector Power Dissipation 10 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2118 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 100mA V(BR)CBO Collector-Base Breakdown Voltage IC= 50uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50uA; IC= 0 ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 0.5A; VCE= 2V COB Output Capacitance IE= 0; VCB= 20V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC= 50mA; VCE= ...