isc Silicon NPN Power Transistor
DESCRIPTION ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-L...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High transition frequency applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
3
A
1.0
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1899
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isc Silicon
NPN Power
Transistor
2SD1899
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= 1.5A; IB= 150mA
VBE(sat)NOTE Base-Emitter Saturation Voltage
IC= 1.5A; IB= 150mA
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
0.25 V
1.2
V
10 μA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
10 μA
hFE-1NOTE
DC Current Gain
IC= 0.2A; VCE= 2V
60
hFE-2NOTE
DC Current Gain
IC= 0.6A; VCE= 2V
100
400
hFE-3NOTE
DC Current Gain
IC= 2A; VCE= 2V
50
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
30
pF
fT
Current-Gain—Bandwidth Product
NOTE:Pulse test PW≤350us,duty cycle ≤2%/pulse
IC= 1.5A; VCE= 5V
120
MHz
hFE-2 Classifications
M
L
K
100-200 160-320 200-400
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