2SD1899

isc Silicon NPN Power Transistor DESCRIPTION ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High transition frequency applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation 3 A 1.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1899 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1899 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= 1.5A; IB= 150mA VBE(sat)NOTE Base-Emitter Saturation Voltage IC= 1.5A; IB= 150mA ICBO Collector Cutoff Current VCB= 60V; IE= 0 0.25 V 1.2 V 10 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 10 μA hFE-1NOTE DC Current Gain IC= 0.2A; VCE= 2V 60 hFE-2NOTE DC Current Gain IC= 0.6A; VCE= 2V 100 400 hFE-3NOTE DC Current Gain IC= 2A; VCE= 2V 50 COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 30 pF fT Current-Gain—Bandwidth Product NOTE:Pulse test PW≤350us,duty cycle ≤2%/pulse IC= 1.5A; VCE= 5V 120 MHz  hFE-2 Classifications M L K 100-200 160-320 200-400 NOTICE： ISC reserves the rights to m...