isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1801
DESCRIPTION ·Large current capacitance and wide ASO ·S...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SD1801
DESCRIPTION ·Large current capacitance and wide ASO ·Small and slim package making it easy to make 2SD1801/2SB1201-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Voltage
regulators,relay drivers,lamp drivers,
electrical equipment
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2
A
ICP
Collector Current-Pulse
Collector Power Dissipation @ TC=25℃
PC
Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
4
A
15
W
0.8
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SD1801
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 50mA
V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10uA; IC= 0
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; ...