isc Silicon NPN Power Transistor
DESCRIPTION ··Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max)@IC= -0.5A ·Wide ...
isc Silicon
NPN Power
Transistor
DESCRIPTION ··Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max)@IC= -0.5A ·Wide Area of Safe Operation ·Complement to Type 2SB1144 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for 100V/1.5A Switching Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
1.5
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25℃ PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
2
A
10 W
1.5
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1684
isc website:www.iscsemi.com
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isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 10uA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 500mA; IB= 50mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
hFE-2
DC Current Gain
IC= 1A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
COB
Out...