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2SD1509
Silicon NPN Power Transistor
Description
isc Silicon
NPN
Darlington Power
Transistor
2SD1509 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC=1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed fo...
Inchange Semiconductor
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