Document
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUS24B/C
DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)-BUS24B 450V (Min)-BUS24C
APPLICATIONS ·Designed for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCES
Collector- Emitter Voltage(VBE= 0)
BUS24B
850
BUS24C 1000
V
VCEO
Collector-Emitter Voltage
BUS24B BUS24C
400 450
V
VEBO IC ICM IB IBM PC Tj Tstg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature
Storage Temperature Range
9 30 50 6 10 250 200 -65~200
V A A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 0.7 ℃/W
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isc website:www.iscsemi.com
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