isc Silicon NPN Power Transistors
isc Product Specification
BUS22
DESCRIPTION High Switching Speed ·Collector-Emitter ...
isc Silicon
NPN Power
Transistors
isc Product Specification
BUS22
DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V (Min)
APPLICATIONS ·Designed for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCES
Collector- EmitterVoltage(VBE= 0)
550
V
VCEO
Collector-Emitter Voltage
300 V
VEBO
Emitter-Base Voltage
9V
IC Collector Current-Continuous
8A
ICM Collector Current-Peak
20 A
IB Base Current-Continuous
4A
IBM Base Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
6 125 200 -65~200
A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.4 ℃/W
·
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isc Silicon
NPN Power
Transistors
isc Product Specification
BUS22
ELECTRICAL CHARACTERISTICS
...
