BUR54

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUR54 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·High Current Capability ·Low Saturation Voltage : VCE(sat)= 1.2V(Max)@ IC= 20A APPLICATIONS ·Designed for switching and linear applications in military and industrial equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO(SUS) Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 50 A IB Base Current-Continuous PC Collector Power Dissipation @TC=100℃ TJ Junction Temperature 10 A 350 W 200 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.5 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUR54 E...