BUP22B

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUP22B/C DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)-BUP22B = 450V(Min)-BUP22C ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching- regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage VBE=0 BUP22B BUP22C 750 850 V VCEO Collector-Emitter Voltage BUP22B BUP22C 400 450 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 8A ICM Collector Current-Peak 20 A IB Base Current-Continuous 4A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUP22B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage BUP22B BUP22C IC= 50mA ;IB= 0 400 450 V VCE(sat) Collector-Emitter Saturation Voltage BUP22B IC= 6A; IB= 0.8A BUP22C IC= 6A; IB= 1A 1.5 V 1.5 VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current BUP22B IC= 6A;...