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BDY96D
Silicon NPN Power Transistor
Description
isc Silicon
NPN
Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max.) @ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching
regulator
s applications. ABSOLUTE MAXIMUM R...
Inchange Semiconductor
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