BDY82

isc Silicon PNP Power Transistor DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector Power Dissipation- : PC= 36W @TC= 25℃ ·Complement to Type BDY80 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -4 A IB Base Current-Continuous -2 A PC Collector Power Dissipation@TC=25℃ 36 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 3.5 ℃/W BDY82 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BDY82 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.05A VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -5V ICEO Collector Cutoff Current VCE= -20V; IB= 0 ICBO Collector Cutoff Current VCB= -20V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0...