SMD Schottky Barrier Diode
COMCHIP
www.comchip.com.tw
CDBS0145
Io = 100mA V R = 45 Volt s Features
Designed for mounti...
SMD
Schottky Barrier Diode
COMCHIP
www.comchip.com.tw
CDBS0145
Io = 100mA V R = 45 Volt s Features
Designed for mounting on small surface Extremely thin package Low stored charge Majority carrier conduction 0805(2012)
0.087(2.20) 0.079(2.00) 0.016(0.40) Typ
Mechanical data
Case: 0805(2012) Standard package, molded plastic. Terminals: Solder plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band. Mounting position: Any.
0.008(R0.20) Typ.
0.055(1.40) 0.047(1.20)
0.043 (1.10) 0.035(0.90)
Dimensions in inches and (millimeter)
Weight: 0.0048 gram. (approximately)
Maximum Rating ( at T A = 25 C unless otherwise noted )
Parameter
Repetitive peak reverse voltage Reverse voltage Average forward current Forward current , Surge peak Power Dissipation Storage temperature Junction temperature 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method )
Conditions
Symbol Min Typ Max Unit
V RRM VR Io I FSM PD T STG Tj -40 -40 1000 250 +125 +125 50 45 100 V V mA mA mW C C
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
Parameter
Forward voltage Reverse current Capacitance between terminals V R = 45 V f = 1MHz, and 10 VDC reverse voltage
Conditions
I F = 100 mA DC
Symbol Min Typ Max Unit
VF IR CT 10 0.55 30 V uA pF
RDS0208011-C
Page 1
SMD
Schottky Barrier Diode
COMCHIP
www.comchip.com.tw
RATING AND CHARACTERISTIC CURVES (CDBS0145)
Fig. 1 - Forward characteristics
1000 1m
Fig. 2 - Reverse characteristics
Reverse ...