SMD Schottky Barrier Diode
COMCHIP
www.comchip.com.tw
CDBS001A
Io = 100mA V R = 30 Volt s Features
Designed for mounti...
SMD
Schottky Barrier Diode
COMCHIP
www.comchip.com.tw
CDBS001A
Io = 100mA V R = 30 Volt s Features
Designed for mounting on small surface Extremely thin package Low stored charge Majority carrier conduction 0805(2012)
0.087(2.20) 0.079(2.00) 0.016(0.40) Typ
Mechanical data
Case: 0805(2012) Standard package, molded plastic Terminals: Solder plated, solderable per MIL-STD-750, method 2026 Polarity: Indicated by cathode band Mounting position: Any Weight: 0.0048 gram (approximately)
0.008(R0.2) Typ.
0.055(1.40) 0.047(1.20)
0.043 (1.10) 0.035(0.90)
Dimensions in inches and (millimeter)
Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter
Repetitive peak reverse voltage Average forward current Forward current , surge peak 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method )
Conditions
Symbol Min Typ Max Unit
V RRM, V R IO I FSM CT PD T STG Tj -40 -40 1000 6 300 +125 +125 30 100 V mA mA pF mW C C
Capacitance between terminals F=1MH Z and 10 V DC reverse voltage Power Dissipation Storage temperature Junction temperature
Electrical Characteristics ( at TA = 25 C unless otherwise noted ) Parameter
Forward voltage 1 Forward voltage 2 Forward voltage 3 Forward voltage 4 Forward voltage 5 Reverse current
Conditions
IF = 0.1 mA DC IF = 1 mA D C IF = 10 m A DC IF = 30 m A DC IF = 100 mA DC V R = 25 V
Symbol Min Typ Max Unit
VF VF VF VF VF IR 0.24 0.32 0.40 0.50 1.00 2 V V V V V uA
RDS0208017-C
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SMD
Schottky Barrier Diode
COMCHIP
www.c...