BDT96

isc Silicon PNP Power Transistor BDT92/94/96 DESCRIPTION ·DC Current Gain- hFE= 20~200@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT92; -80V(Min)- BDT94; -100V(Min)- BDT96 ·Complement to Type BDT91/93/95 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT92 -60 VCBO Collector-Base Voltage BDT94 -80 BDT96 -100 VCEO Collector-Emitter Voltage BDT92 BDT94 BDT96 -60 -80 -100 VEBO Emitter-Base Voltage -7 IC Collector Current-Continuous -10 ICM Collector Current-Peak -20 IB Base Current-Continuous -4 PC Collector Power Dissipation @ TC=25℃ 90 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.4 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BDT92/94/96 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BDT92 BDT94 BDT96 IC= -30mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -3.3A VBE(...