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BDS16
Silicon NPN Power Transistor
Description
NCHANGE Semiconductor isc Silicon
NPN
Power
Transistor
isc Product Specification BDS16 DESCRIPTION ·High Voltage: VCEV= 120V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 4A ·High Reliablity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power linear and switching application and Ge...
Inchange Semiconductor
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