BD546C

isc Silicon PNP Power Transistor BD546/A/B/C DESCRIPTION ·Collector Current -IC= -15A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -40V(Min)- BD546; -60V(Min)- BD546A -80V(Min)- BD546B; -100V(Min)- BD546C ·Complement to Type BD545/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD546 -40 BD546A -60 VCBO Collector-Base Voltage V BD546B -80 BD546C -100 BD546 -40 VCEO Collector-Emitter Voltage BD546A -60 V BD546B -80 BD546C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A 3.5 W 85 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.47 ℃/W Rth j-c Thermal Resistance,Junction to Ambient 35.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BD546 V(BR)CEO Collector-Emitter Breakdown Voltage BD546A BD546B BD546C VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage BD546 ICES Collector Cutoff Current...