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RA30H1317M1

Mitsubishi
Part Number RA30H1317M1
Manufacturer Mitsubishi
Description Silicon RF Power Modules
Published Nov 14, 2016
Detailed Description MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE RA30H1317M1OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 135...
Datasheet PDF File RA30H1317M1 PDF File

RA30H1317M1
RA30H1317M1

Overview
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE RA30H1317M1OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 135-175MHz 30W 12.
5V 2 Stage Amp.
For MOBILE RADIO TENTATIVE DESCRIPTION The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.
5-volt mobile radios that operate in the 135- to 175-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.
The output power and drain current increase as the gate voltage increases.
With a gate voltage around 3.
5V (minimum), output power and drain current increases substantially.
The nominal output power becomes available at 4V (typical) and 5V (maximum).
At VGG=5V, the typical gate current ...


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