FUJITSU SEMICONDUCTOR DATA SHEET
Memory FRAM
DS501-00011-1v0-E
256 K (32 K × 8) Bit
MB85R256F
■ DESCRIPTIONS
The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R256F can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
The MB85R256F uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
■ FEATURES
• Bit configuration : 32,768 words × 8 bits
• High endurance 10 Billion Read/writes
• Peripheral circuit CMOS construction
• Operating power supply voltage : 2.7 V to 3.6 V
• Operating temperature range : −40 °C to +85 °C
• Data re.