isc Silicon NPN Power Transistor
DESCRIPTION · High Voltage · Low base-drive requirements · Collector-Emitter Sustainin...
isc Silicon
NPN Power
Transistor
DESCRIPTION · High Voltage · Low base-drive requirements · Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Horizontal deflection output for TV
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current- Continuous
10
A
ICM
Collector peak current (tp<5ms)
15
A
IB
Base Current- Continuous
5
A
PTOT
Total dissipation at TC=25℃
57
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 2.2
UNIT ℃/W
MD1803DFX
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Eollector-base breakdown Voltage IC= 200mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB=1.25A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5.0A; IB=1.25A
ICBO
Collector Cutoff Current
VCB= 1500V ; IE= 0 VCB= 1500V ; IE= 0 ,TC=125
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 5A ; VCE= 1V
hFE-3
DC Current Gain
IC= 5A ; VCE= 5V
MD1803DFX
MIN TYP. MAX UNIT
...