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Part Number MB84VD23381HJ-70
Manufacturers Fujitsu
Logo Fujitsu
Description 64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
Datasheet MB84VD23381HJ-70 DatasheetMB84VD23381HJ-70 Datasheet (PDF)

  MB84VD23381HJ-70   MB84VD23381HJ-70
FUJITSU SEMICONDUCTOR DATA SHEET DS05-50312-1E Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM CMOS 64M (×16) FLASH MEMORY & 16M (×16) Mobile FCRAMTM MB84VD23381HJ-70 s FEATURES • Power Supply Voltage of 2.7 V to 3.1 V • High Performance 70 ns maximum random access time (Flash) 60 ns maximum random access time (FCRAM) • Operating Temperature –30 °C to +85 °C • Package 56-ball BGA s PRODUCT LINEUP Flash Supply Voltage (V) Max Random Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) +0.1 V VCCf* = 3.0 V –0.3 V 70 70 30 * : Both VCCf and VCCr must be the same level when either part is being accessed. s PACKAGE 56-ball plastic FBGA (Continued) FCRAM +0.1 V VCCr* = 3.0 V –0.3 V 60 60 35 BGA-56P-M04 MBVD23381HJ-70 (Continued) — FLASH MEMORY • Simultaneous Read/Write operations (Dual Bank) • FlexBankTM*1 Bank A : 8 Mbit (8 KB × 8 and 64 KB × 15) Bank B : 24 Mbit (64 KB × 48) Bank C : 24 Mbit (64 KB × 48) Bank D : 8 Mbit (8 .



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