isc Silicon NPN Power Transistor
KTD998
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type KTB778 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High power amplifier applications ·Recommend for 45-50W audio frequency amplifier
output stage app...
